DocumentCode :
311804
Title :
The effect of a variation in tone spacing on the intermodulation performance of Class A and Class AB HBT power amplifiers
Author :
McIntosh, P.M. ; Snowden, C.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Volume :
2
fYear :
1997
fDate :
8-13 June 1997
Firstpage :
371
Abstract :
The first investigation into the effect of frequency separation on the intermodulation distortion performance of Heterojunction Bipolar Transistor (HBT) power amplifiers is reported. The measured results show that the frequency spacing between the two input tones affects the intermodulation distortion performance of Class AB power amplifiers, but not Class A power amplifiers.
Keywords :
bipolar transistor circuits; heterojunction bipolar transistors; intermodulation distortion; microwave power amplifiers; Class A; Class AB; HBT power amplifier; frequency separation; heterojunction bipolar transistor; intermodulation distortion; tone spacing; Circuit simulation; Distortion measurement; Frequency measurement; Frequency response; Heterojunction bipolar transistors; High power amplifiers; Intermodulation distortion; Operational amplifiers; Power amplifiers; Power measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3814-6
Type :
conf
DOI :
10.1109/MWSYM.1997.602811
Filename :
602811
Link To Document :
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