DocumentCode
3118047
Title
Lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process
Author
Giziewicz, Wojciech ; Prasad, Sheila ; Fonstad, Clifton G., Jr.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fYear
2004
fDate
24-27 Oct. 2004
Firstpage
284
Abstract
Lateral detectors fabricated in an unmodified commercial GaAs VLSI process are presented. The detectors exhibit previously observed characteristic sensitivity and capacitance properties. High speed measurements indicate a bandwidth in excess of 4 GHz.
Keywords
III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; p-i-n photodiodes; photodetectors; 4 GHz; GaAs; VLSI process; detector capacitance; integrated optoelectronics; lateral p-i-n photodetectors; lateral p-i-n photodiodes; Detectors; Gallium arsenide; Implants; Ion implantation; MESFET integrated circuits; P-i-n diodes; PIN photodiodes; Parasitic capacitance; Photodetectors; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2004. Proceedings of IEEE
Print_ISBN
0-7803-8692-2
Type
conf
DOI
10.1109/ICSENS.2004.1426157
Filename
1426157
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