Title :
Electrical characterization of model-based dummy feature insertion in Cu interconnects
Author :
Doong, Kelvin Y Y ; Lin, K.C. ; Tseng, T.C. ; Lu, Y.C. ; Lin, S.C. ; Hung, L.J. ; Ho, P.S. ; Hsieh, Sunnys ; Young, K.L. ; Liang, M.S.
Author_Institution :
Taiwan Semicond. Manuf. Corp., Shinchu, Taiwan
Abstract :
A methodology is proposed to characterize the electrical performance of model-based dummy feature insertion in Cu interconnect. Two types of test structures were designed to explore the electrical performance discrepancy between the rule-based and model-based dummy feature insertion. The sheet resistance dependency on design rule is characterized at the various density conditions. 2-D field solver extracts the parasitic capacitance caused by dummy feature insertion. A model-based dummy feature insertion algorithm using randomized shapes is proposed to assist the uniformity control of Cu CMP and MIT/SEMATECH 854 AZ test vehicle is used to demonstrate the feasibility of the proposed algorithm.
Keywords :
chemical mechanical polishing; circuit optimisation; copper; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; nonlinear programming; planarisation; 2-D field solver; CMP; Cu; MIT/SEMATECH 854 AZ test vehicle; copper interconnect; design rule; electrical performance; local density variation minimization algorithm; model-based dummy feature insertion; next generation interconnect technology; nonlinear programming problem; parasitic capacitance; planarization integration; randomized-shape dummy features; sheet resistance dependence; test structures; uniformity control; Copper; Metallization; Planarization; Predictive models; Shape control; Silicon compounds; Silicon on insulator technology; Strips; Testing; Tiles;
Conference_Titel :
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN :
0-7803-8262-5
DOI :
10.1109/ICMTS.2004.1309307