Title :
A comparison of W-band MMIC mixers using InP HEMT technology
Author :
Virk, R.S. ; Long Tran ; Matloubian, M. ; Minh Le ; Case, M.G. ; Ngo, C.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
This paper compares the performance of three different W-band mixer designs in the same InP HEMT technology. A resistive HEMT mixer, an active HEMT mixer, and a rat-race diode mixer are designed and measured for conversion, intermodulation and noise performance for an LO frequency of 94 GHz and IF frequencies ranging from 0.5 to 5 GHz. This is the first direct comparison of three high-performance W-band mixers fabricated in the same InP HEMT technology.
Keywords :
HEMT integrated circuits; MMIC mixers; field effect MIMIC; indium compounds; integrated circuit noise; intermodulation; millimetre wave mixers; 0.5 to 5 GHz; 94 GHz; EHF; InP; InP HEMT technology; W-band MMIC mixers; active HEMT mixer; intermodulation; noise performance; rat-race diode mixer; resistive HEMT mixer; Circuits; Diodes; HEMTs; Indium phosphide; MMICs; Mixers; Paper technology; Radio frequency; Space technology; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602826
