60 GHz flip-chip assembled MIC design considering chip-substrate effect

Author

Arai, Y. ; Sato, M. ; Yamada, H.T. ; Hamada, T. ; Nagai, K. ; Fujishiro, H.I.

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

447

Abstract

In this paper, a 60 GHz MICs with flip-chip assembled pseudomorphic-HEMT is demonstrated. With electromagnetic field analysis, the assembly effect was estimated. An amplifier has a gain of 13 dB and a 30/60 GHz frequency doubler has a gain of -3 dB. Measured and simulated results clarify the potential of the structure and design method.

Keywords

HEMT circuits; equivalent circuits; flip-chip devices; frequency multipliers; hybrid integrated circuits; microassembling; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave integrated circuits; 13 dB; 30 GHz; 60 GHz; EHF; MM-wave amplifier; MM-wave frequency doubler; PHEMT; chip-substrate effect; design method; electromagnetic field analysis; flip-chip assembled MIC design; pseudomorphic HEMT; Admittance; Assembly; Capacitance measurement; Circuit simulation; Electromagnetic fields; Equivalent circuits; HEMTs; Microwave integrated circuits; Semiconductor device measurement; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602829

Filename

602829