• DocumentCode
    3118124
  • Title

    Surface structural variations of nanostructured porous silicon template formed electrochemically of current density parameter

  • Author

    Asli, N.A. ; Yusop, S.F.M. ; Maslihan, A.Z. ; Sekak, K.A. ; Bakar, S.A. ; Rusop, M. ; Abdullah, Saad

  • Author_Institution
    NANO-SciTech Centre, Inst. of Sci., Malaysia
  • fYear
    2012
  • fDate
    23-26 Sept. 2012
  • Firstpage
    27
  • Lastpage
    32
  • Abstract
    Nanostructured porous silicon templates (NPSiT) were prepared by photo-electrochemical anodization of p-type crystalline silicon in HF electrolyte at different current density. Five samples were prepared with current densities varied from 5 to 40 minutes at 30 minutes of etching time. The porosity and thickness were measured using the gravimetric method. The surface roughness and topography of porous layers were investigated by atomic force microscopy. The surface roughness, porosity and thickness of porous layers monotonically increase with current densities. The optimum current density of NPSi prepared at optimum etching time (30 minutes) was obtained 20 mA/cm2, that form uniform pores and topography. his electronic document is a “live” template. The various components of your paper [title, text, heads, etc.] are already defined on the style sheet, as illustrated by the portions given in this document.
  • Keywords
    anodisation; atomic force microscopy; current density; electrochemical analysis; electrolytes; elemental semiconductors; etching; nanofabrication; nanoporous materials; photoelectrochemistry; porosity; semiconductor growth; silicon; surface roughness; HF electrolytes; Si; atomic force microscopy; current density parameter; electrochemically formed nanostructured porous silicon template; electronic document; etching time; gravimetric method; live template; p-type crystalline silicon; photo-electrochemical anodization; porosity; porous layer thickness; style sheet; surface roughness; surface structural variations; surface topography; time 30 min; Current density; Etching; Rough surfaces; Silicon; Surface topography; current density; nanostructured porous silicon; pore diameter; porosity; surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Business, Engineering and Industrial Applications (ISBEIA), 2012 IEEE Symposium on
  • Conference_Location
    Bandung
  • Print_ISBN
    978-1-4577-1632-4
  • Type

    conf

  • DOI
    10.1109/ISBEIA.2012.6422887
  • Filename
    6422887