DocumentCode
3118124
Title
Surface structural variations of nanostructured porous silicon template formed electrochemically of current density parameter
Author
Asli, N.A. ; Yusop, S.F.M. ; Maslihan, A.Z. ; Sekak, K.A. ; Bakar, S.A. ; Rusop, M. ; Abdullah, Saad
Author_Institution
NANO-SciTech Centre, Inst. of Sci., Malaysia
fYear
2012
fDate
23-26 Sept. 2012
Firstpage
27
Lastpage
32
Abstract
Nanostructured porous silicon templates (NPSiT) were prepared by photo-electrochemical anodization of p-type crystalline silicon in HF electrolyte at different current density. Five samples were prepared with current densities varied from 5 to 40 minutes at 30 minutes of etching time. The porosity and thickness were measured using the gravimetric method. The surface roughness and topography of porous layers were investigated by atomic force microscopy. The surface roughness, porosity and thickness of porous layers monotonically increase with current densities. The optimum current density of NPSi prepared at optimum etching time (30 minutes) was obtained 20 mA/cm2, that form uniform pores and topography. his electronic document is a “live” template. The various components of your paper [title, text, heads, etc.] are already defined on the style sheet, as illustrated by the portions given in this document.
Keywords
anodisation; atomic force microscopy; current density; electrochemical analysis; electrolytes; elemental semiconductors; etching; nanofabrication; nanoporous materials; photoelectrochemistry; porosity; semiconductor growth; silicon; surface roughness; HF electrolytes; Si; atomic force microscopy; current density parameter; electrochemically formed nanostructured porous silicon template; electronic document; etching time; gravimetric method; live template; p-type crystalline silicon; photo-electrochemical anodization; porosity; porous layer thickness; style sheet; surface roughness; surface structural variations; surface topography; time 30 min; Current density; Etching; Rough surfaces; Silicon; Surface topography; current density; nanostructured porous silicon; pore diameter; porosity; surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Business, Engineering and Industrial Applications (ISBEIA), 2012 IEEE Symposium on
Conference_Location
Bandung
Print_ISBN
978-1-4577-1632-4
Type
conf
DOI
10.1109/ISBEIA.2012.6422887
Filename
6422887
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