InP HBT on Si substrates with integral passive components: a wafer scale package

Author

Chun, C. ; Evers, N. ; Laskar, J. ; Jokerst, N.M. ; Chau, H.-F. ; Beam, E., III

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

513

Abstract

An InP based HBT is integrated to a Si substrate insulated with BCB by removing the InP substrate and bonding the active device layers. The DC and RF characteristics show minimal degradation after bonding to the Si. Transmission line structures are fabricated and measured on both bare Si and Si coated with BCB. Insertion loss of the CPW lines demonstrate useful high frequency propagation with BCB on the lossy substrate. Utilizing these results, an amplifier is designed to demonstrate InP thin-film integrated high frequency circuits on silicon. These results point to the development of wafer scale packaged high frequency electronics.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device packaging; BCB coating; CPW transmission line; DC characteristics; InP; InP HBT; RF characteristics; Si; Si substrate; active device; amplifier; bonding; high frequency circuit; insertion loss; integral passive component; thin film integration; wafer scale package; Degradation; Distributed parameter circuits; Heterojunction bipolar transistors; Indium phosphide; Insulation; Propagation losses; Radio frequency; Substrates; Transmission line measurements; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602844

Filename

602844