Title :
InP HBT on Si substrates with integral passive components: a wafer scale package
Author :
Chun, C. ; Evers, N. ; Laskar, J. ; Jokerst, N.M. ; Chau, H.-F. ; Beam, E., III
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
An InP based HBT is integrated to a Si substrate insulated with BCB by removing the InP substrate and bonding the active device layers. The DC and RF characteristics show minimal degradation after bonding to the Si. Transmission line structures are fabricated and measured on both bare Si and Si coated with BCB. Insertion loss of the CPW lines demonstrate useful high frequency propagation with BCB on the lossy substrate. Utilizing these results, an amplifier is designed to demonstrate InP thin-film integrated high frequency circuits on silicon. These results point to the development of wafer scale packaged high frequency electronics.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device packaging; BCB coating; CPW transmission line; DC characteristics; InP; InP HBT; RF characteristics; Si; Si substrate; active device; amplifier; bonding; high frequency circuit; insertion loss; integral passive component; thin film integration; wafer scale package; Degradation; Distributed parameter circuits; Heterojunction bipolar transistors; Indium phosphide; Insulation; Propagation losses; Radio frequency; Substrates; Transmission line measurements; Wafer bonding;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602844
