Athermal InP-based 90°-hybrid Rx OEICs with pin-PDs >60 GHz for coherent DP-QPSK photoreceivers

Author

Kunkel, R. ; Bach, H. -G ; Hoffmann, D. ; Mekonnen, G.G. ; Zhang, R. ; Schmidt, D. ; Schell, M. ; Moñux, Alejandro Ortega ; Halir, Robert ; Molina-Fernandez, Inigo

Author_Institution

Fraunhofer Inst. for Telecommun., Heinrich-Hertz-Inst., Berlin, Germany

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

An InP-based 90° hybrid OEIC with integrated pin-photodiodes is presented. It operates unaffected in the temperature range of 15°-35° C, offering low PDL <;1 dB, and stable performance in the wavelengths of 1530 nm to 1565 nm.

Keywords

III-V semiconductors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; quadrature phase shift keying; InP; athermal based hybrid receiver OEIC; coherent DP-QPSK photoreceiver; integrated pin photodiode; optoelectronic integrated circuit; temperature 15 C to 35 C; wavelength 1530 nm to 1565 nm; Etching; Optical device fabrication; Optical devices; Optical receivers; Optical waveguides; Optoelectronic devices; Page description languages; Phase shifters; Photodiodes; Testing; 100 GbE transmission; Optical 90°hybrid; monolithic QPSK receiver; waveguide-integrated photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516309

Filename

5516309