A low power GaAs front-end IC with current-reuse configuration using 0.15 /spl mu/m gate MODFETs

Author

Ishida, H. ; Koizumi, H. ; Miyatsuji, K. ; Takenaka, H. ; Tanaka, T. ; Ueda, D.

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

669

Abstract

We have developed a novel current-reuse configuration of front-end IC, where the current can be reused in the whole circuit blocks such as low noise amplifier, local amplifier and mixer. The power dissipation is reduced by the factor of three. Excellent high frequency performance such as conversion gain of 30 dB and NF of 1.6 dB at 1.5 GHz is attained under the conditions of supply voltage and current of 3.6 V and 3 mA, respectively.

Keywords

HEMT integrated circuits; III-V semiconductors; UHF integrated circuits; gallium arsenide; land mobile radio; radio receivers; 1.5 GHz; 1.6 dB; 3 mA; 3.6 V; 30 dB; GaAs; MODFETs; UHF IC; current-reuse configuration; local amplifier; low noise amplifier; low power front-end IC; mixer; power dissipation reduction; Current supplies; Frequency conversion; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; Mixers; Noise measurement; Performance gain; Power dissipation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602880

Filename

602880