An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications

Author

Wang, Chin-Te ; Kuo, Chien-I ; Lim, Wee-Chin ; Hsu, Li-Han ; Hsu, Heng-Tung ; Miyamoto, Yasuyuki ; Chang, Edward Yi ; Tsai, Szu-ping ; Chiu, Yu-Sheng

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

4

Abstract

The fabrication process of an 80 nm In_0.7Ga_0.3As MHEMT device with flip-chip packaging on Al₂O₃ substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I_DS = 425 mA/mm and high g_m = 970 mS/mm at V_DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF_min)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In_0.7Ga_0.3As MHEMT device for low noise applications at W-band.

Keywords

aluminium compounds; electronics packaging; flip-chip devices; gallium arsenide; high electron mobility transistors; indium compounds; Al₂O₃; In_0.7Ga_0.3As; MHEMT device; W-band low noise applications; flip-chip packaging; frequency 50 GHz; gain 10 dB; voltage 1.5 V; Fabrication; Noise figure; Noise measurement; Packaging; Performance gain; Radio frequency; mHEMTs; Flip-chip; HEMTs; InxGa1-xAs-channel;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516317

Filename

5516317