Title :
An 80 nm In0.7Ga0.3As MHEMT with flip-chip packaging for W-band low noise applications
Author :
Wang, Chin-Te ; Kuo, Chien-I ; Lim, Wee-Chin ; Hsu, Li-Han ; Hsu, Heng-Tung ; Miyamoto, Yasuyuki ; Chang, Edward Yi ; Tsai, Szu-ping ; Chiu, Yu-Sheng
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
May 31 2010-June 4 2010
Abstract :
The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high IDS = 425 mA/mm and high gm = 970 mS/mm at VDS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.
Keywords :
aluminium compounds; electronics packaging; flip-chip devices; gallium arsenide; high electron mobility transistors; indium compounds; Al2O3; In0.7Ga0.3As; MHEMT device; W-band low noise applications; flip-chip packaging; frequency 50 GHz; gain 10 dB; voltage 1.5 V; Fabrication; Noise figure; Noise measurement; Packaging; Performance gain; Radio frequency; mHEMTs; Flip-chip; HEMTs; InxGa1-xAs-channel;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516317
