DocumentCode :
311856
Title :
A monolithic GaAs PIN switch network for a 77 GHz automotive collision warning radar
Author :
Putnam, J. ; Barter, M. ; Wood, K. ; LeBlanc, J.
Author_Institution :
Burlington Semicond. Oper., MA, USA
Volume :
2
fYear :
1997
fDate :
8-13 June 1997
Firstpage :
753
Abstract :
This paper presents the design, fabrication, and performance of a 77 GHz monolithic GaAs PIN switch network developed for an automotive collision warning radar. The RF front end of the radar contains three control circuits which were initially realized by a hybrid approach using a duroid circuit and beam lead diodes. These three circuits were sucessfully integrated into a single 77 GHz MMIC. The MMIC uses vertical GaAs PIN diodes with a switching cutoff frequency of over 3000 GHz, attaining low insertion loss and high isolation. Insertion loss is comparable to that obtained with a hybrid circuit, while the isolation improved from a typical level of 16 dB for a single hybrid switch to over 25 dB in the MMIC. The use of GaAs PIN diodes also allowed switching speeds of less than 2 ns to be attained, a key requirement for the radar.
Keywords :
Doppler radar; III-V semiconductors; MIMIC; gallium arsenide; p-i-n diodes; radar equipment; switching networks; 2 ns; 3000 GHz; 77 GHz; GaAs; MMIC; RF front end; automotive collision warning radar; beam lead diodes; control circuits; duroid circuit; high isolation; hybrid approach; low insertion loss; monolithic GaAs PIN switch network; pulsed Doppler radar; switching cutoff frequency; switching speeds; vertical GaAs PIN diodes; Automotive engineering; Circuits; Diodes; Fabrication; Gallium arsenide; Insertion loss; MMICs; Radar; Radio frequency; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-3814-6
Type :
conf
DOI :
10.1109/MWSYM.1997.602899
Filename :
602899
Link To Document :
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