Title :
Multilayer passive components for uniplanar Si/SiGe MMICs
Author :
Gokdemir, T. ; Karacaoglu, U. ; Budimir, D. ; Economides, S.B. ; Khalid, A. ; Rezazadeh, A.A. ; Robertson, I.D.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´s Coll., London, UK
Abstract :
This paper describes results for novel multilayer passive components, fabricated on silicon substrates for Si/SiGe uniplanar MMICs. Results are compared for high resistivity silicon, high resistivity silicon with an added polyimide layer, and silicon with silicon dioxide (to represent SOI bonded silicon technology). The components that have been characterized include CPW and TFMS transmission lines and couplers, inductors, capacitors, and planar transformers.
Keywords :
Ge-Si alloys; bipolar MMIC; capacitors; coplanar waveguides; elemental semiconductors; inductors; lumped parameter networks; microstrip couplers; microstrip lines; silicon; transformers; waveguide couplers; CPW couplers; CPW transmission lines; SOI bonded silicon technology; Si; Si substrates; Si-SiGe; Si-SiO/sub 2/; Si/SiGe uniplanar MMICs; TFMS couplers; TFMS transmission lines; capacitors; high resistivity Si; inductors; multilayer passive components; planar transformers; polyimide layer; Bonding; Conductivity; Coplanar waveguides; Germanium silicon alloys; MMICs; Nonhomogeneous media; Planar transmission lines; Polyimides; Silicon compounds; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602901
