[Front cover]

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

1

Abstract

This paper dealt with the following topics: photonic-electronic convergence; CMOS technologies; semiconductor growth; quantum optics; LED; quatum dots; MOSFET; III-V semiconductors; lasers; modulators; nanostructured devices; epitaxy; HBT; high-speed switches; Sb-based alloys; heterostructures; towards THz; nitrides; optoelectronic devices; integrated light sources; photodetectors; HEMT; MMIC; integrated receivers; heteroepitaxy; photonic crystal devices; FET for logic; MOS; and other related semiconductor devices.

Keywords

CMOS integrated circuits; III-V semiconductors; MMIC; MOSFET; high electron mobility transistors; lasers; light emitting diodes; modulators; nanotechnology; optoelectronic devices; photodetectors; photoelectric devices; photonic crystals; quantum optics; semiconductor devices; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum dots; semiconductor switches; wide band gap semiconductors; CMOS technologies; FET; HBT; HEMT; III-V semiconductors; LED; MMIC; MOSFET; Sb-based alloys; epitaxy; heteroepitaxy; heterostructures; high-speed switches; integrated light sources; integrated receivers; lasers; modulators; nanostructured devices; nitrides; optoelectronic devices; photodetectors; photonic crystal devices; photonic-electronic convergence; quantum optics; quatum dots; semiconductor devices; semiconductor growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516329

Filename

5516329