DocumentCode
311880
Title
A flip-chip high efficiency X-band HPA
Author
Cameron, P. ; Pan, W. ; Hanz, C. ; Nicklaus, R. ; Chu, P. ; Wong, D. ; Cisco, T.
Author_Institution
Solid State Microwave Lab., Hughes Aircraft Co., Fullerton, CA, USA
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
889
Abstract
We have developed a broad band, high efficiency, X-band MMIC HPA implemented with our flip-chip technology. The amplifier utilizes PHEMT devices to achieve better than 35% PAE (40% peak) with an associated five watts of output power. The flip-chip technology reduces cost while at the same time increases performance. To our knowledge, this is the first reported flip-chip HPA that uses PHEMT devices.
Keywords
HEMT integrated circuits; MMIC power amplifiers; flip-chip devices; integrated circuit design; microwave power amplifiers; wideband amplifiers; 35 to 40 percent; 5 W; MMIC; PAE; PHEMT devices; X-band HPA; broad band amplifiers; efficiency; flip-chip technology; output power; Aircraft; Costs; FETs; Fabrication; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602942
Filename
602942
Link To Document