Title :
Measurement of dynamic load lines of power heterojunction bipolar transistor
Author :
Ohara, S. ; Nakasha, Y. ; Iwai, T. ; Joshin, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Dynamic load lines of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) were experimentally measured with a load circuit tuned to maximum collector efficiency (/spl eta//sub c/) and maximum gain. The phase relationship between the collector voltage and the collector current depended on the load circuit. The trajectory of the dynamic load line has a non-oval shape for the output power where gain compression heavily occurs.
Keywords :
UHF bipolar transistors; UHF measurement; heterojunction bipolar transistors; power bipolar transistors; InGaP-GaAs; collector current; collector voltage; dynamic load lines; gain compression; load circuit; maximum collector efficiency; maximum gain; output power; phase relationship; power heterojunction bipolar transistor; Bipolar transistors; Circuits; Gain measurement; Heterojunction bipolar transistors; Power amplifiers; Power measurement; Power system harmonics; Transient analysis; Virtual colonoscopy; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602947
