Title :
Air bridge based planar hybrid technology for microwave and millimeterwave applications
Author :
Wasige, E. ; Kompa, G. ; van Raay, F. ; Rangelow, I.W. ; Scholz, W. ; Shi, F. ; Kassing, R. ; Meyer, R. ; Amann, M.-C.
Author_Institution :
FG Hochfrequenztech., Kassel Univ., Germany
Abstract :
A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (GaAs FETs) are integrated in high resistivity silicon substrates with a vertical precision of better than 2 /spl mu/m and lateral tolerances less than 10 /spl mu/m. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. The basic features of the proposed technology are presented here.
Keywords :
hybrid integrated circuits; integrated circuit interconnections; integrated circuit packaging; microwave integrated circuits; millimetre wave integrated circuits; GaAs; air bridge; interconnections; lateral tolerances; microwave FET chips; microwave applications; millimeterwave applications; packaging; planar hybrid technology; vertical precision; Bonding; Bridge circuits; FETs; Gallium arsenide; Integrated circuit interconnections; Integrated circuit technology; Microwave devices; Microwave technology; Silicon; Substrates;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602951
