Air bridge based planar hybrid technology for microwave and millimeterwave applications

Author

Wasige, E. ; Kompa, G. ; van Raay, F. ; Rangelow, I.W. ; Scholz, W. ; Shi, F. ; Kassing, R. ; Meyer, R. ; Amann, M.-C.

Author_Institution

FG Hochfrequenztech., Kassel Univ., Germany

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

925

Abstract

A new silicon based, planar hybrid technology is being developed to address limitations associated with packaging and interconnections. The approach combines the advantages of both hybrid and monolithic technologies. Microwave transistor chips (GaAs FETs) are integrated in high resistivity silicon substrates with a vertical precision of better than 2 /spl mu/m and lateral tolerances less than 10 /spl mu/m. Air bridge technology and thin film techniques are then used to provide the necessary interconnections. The basic features of the proposed technology are presented here.

Keywords

hybrid integrated circuits; integrated circuit interconnections; integrated circuit packaging; microwave integrated circuits; millimetre wave integrated circuits; GaAs; air bridge; interconnections; lateral tolerances; microwave FET chips; microwave applications; millimeterwave applications; packaging; planar hybrid technology; vertical precision; Bonding; Bridge circuits; FETs; Gallium arsenide; Integrated circuit interconnections; Integrated circuit technology; Microwave devices; Microwave technology; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602951

Filename

602951