InP MMICs for V-band FMCW radar

Author

Sasaki, K. ; Utsu, J. ; Matsugatani, K. ; Hoshino, K. ; Taguchi, T. ; Ueno, Y.

Author_Institution

Res. Labs., Denson Corp., Aichi, Japan

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

937

Abstract

We have developed InP based MMICs for V-band frequency modulated continuous wave (FMCW) radar. For the transistor of these MMICs, we used the InAlAs/InGaAs on InP pseudomorphic high electron mobility transistor (HEMT) with a 0.5 /spl mu/m gate length. Because of the high electron mobility and the high sheet charge density, the HEMT performed with sufficient output power gain in the millimeter-wave frequency range. Millimeter-wave circuitry consists of four kinds of MMIC chips; 30 GHz voltage controlled oscillator (VCO), 30/60 GHz frequency doubler, 60 GHz amplifier and 60 GHz single-balanced mixer. We carried out a prototype experiment of radar transceiver utilizing these MMICs and confirmed FMCW radar operation.

Keywords

CW radar; FM radar; HEMT integrated circuits; field effect MIMIC; millimetre wave amplifiers; millimetre wave frequency convertors; millimetre wave mixers; millimetre wave oscillators; radar receivers; radar transmitters; transceivers; 0.5 micron; 30 GHz; 60 GHz; FMCW radar; InAlAs-InGaAs-InP; InP; MMICs; V-band; amplifier; electron mobility; frequency doubler; millimeter-wave frequency range; output power gain; pseudomorphic high electron mobility transistor; radar transceiver; sheet charge density; single-balanced mixer; voltage controlled oscillator; Electron mobility; Frequency; HEMTs; Indium phosphide; MMICs; MODFETs; Millimeter wave circuits; Millimeter wave radar; Millimeter wave transistors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602954

Filename

602954