Title :
Power generation of millimeter-wave SiC avalanche transit time oscillator at high temperature
Author :
Meng, C.C. ; Liao, G.Z.
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Abstract :
For the first time, millimeter-wave SiC (Silicon Carbide) IMPATT oscillator was analyzed at 500 K and 800 K with temperature dependent ionization rates and saturation velocity. The large signal simulations demonstrate the fact that SiC IMPATT devices have efficiency and power advantage over Si and GaAs IMPATT devices at millimeter-wave frequencies. The efficiencies (and d.c. power density) at 800 K for depletion widths of 0.25 /spl mu/m (200 GHz), 0.5 /spl mu/m (100 GHz) and 1 /spl mu/m (50 GHz) are 12.4% (6.7 MW/cm/sup 2/), 15% (4.5 MW/cm/sup 2/) and 15.8% (3.3 MW/cm/sup 2/), respectively, for p/sup +/n single-drift flat-profile structures.
Keywords :
IMPATT diodes; IMPATT oscillators; circuit analysis computing; digital simulation; millimetre wave oscillators; semiconductor materials; silicon compounds; 0.25 micron; 0.5 micron; 1 micron; 100 GHz; 12.4 percent; 15 percent; 15.8 percent; 200 GHz; 50 GHz; 500 K; 800 K; IMPATT oscillator; SiC; dc power density; depletion widths; large signal simulations; mm-wave avalanche transit time oscillator; p/sup +/n single-drift flat-profile structures; saturation velocity; temperature dependent ionization rates; Charge carrier processes; Electrons; Frequency; Gallium arsenide; Ionization; Oscillators; Power generation; Silicon carbide; Temperature measurement; Thermal conductivity;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602961
