Microwave Si power transistor with monolithically fabricated impedance matching circuits

Author

Phing Li ; Luck, C. ; Soshea, E. ; Perko, R. ; Boles, T. ; Noonan, P. ; Haggis, D.

Author_Institution

M/A COM, An AMP Co., Corp R&D Center, MA, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

991

Abstract

A new technology is demonstrated for microwave Si power transistor manufacturing. Based on flip-chip technology and M/A-COM´s glass based technology, impedance matching circuits in microwave Si power transistor can be fabricated monolithically using standard thin film processes. Thus, the high manufacturing cost for microwave Si power transistors, primarily associated with the package and assembly, can be substantially reduced. 1.88 GHz Si power transistors were fabricated using the new technology. In CW common emitter operation mode, 5 W of output power is obtained with 11 dB gain and 39% power added efficiency, at Vcc=25 V and Icq=25 mA.

Keywords

UHF bipolar transistors; flip-chip devices; impedance matching; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor device manufacture; semiconductor device packaging; thin film circuits; 1.88 GHz; 11 dB; 25 V; 25 mA; 39 percent; 5 W; CW common emitter operation mode; M/A-COM glass based technology; Si; flip-chip technology; manufacturing cost reduction; microwave Si power transistor manufacturing; monolithically fabricated impedance matching circuits; output power; power added efficiency; power transistor package; thin film processes; Costs; Glass; Impedance matching; Manufacturing; Microwave circuits; Microwave technology; Power transistors; Semiconductor thin films; Thin film circuits; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602968

Filename

602968