Title :
HBT active antenna as a self oscillating Doppler sensor
Author :
Kelly, M.J. ; Stewart, J.A.C. ; Patterson, A.D.
Author_Institution :
Merlin Microwave Ltd., Belfast, UK
Abstract :
This paper investigates the use of Heterojunction Bipolar Transistors (HBTs) as the working device in an active antenna for a self detection system. The devices used here are GaInP-GaAs HBT´s from the GMMT F40 process. The design and performance of an active antenna based on this device is presented. A new large signal model is used to develop the active antenna described in this paper. The element oscillates at 11.40 GHz and produces approximately 5 mW of radiated power. A minimum detectable signal (MDS) of -99 dBm in a 10 Hz bandwidth has been measured.
Keywords :
Doppler radar; III-V semiconductors; active antennas; equivalent circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microstrip antennas; microwave detectors; semiconductor device models; 11.4 GHz; 5 mW; GMMT F40 process; GaInP-GaAs; GaInP-GaAs HBT; HBT active antenna; heterojunction bipolar transistors; large signal model; radar; self oscillating Doppler sensor; Antenna measurements; Circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Microwave devices; Oscillators; Phase noise; Radar detection;
Conference_Titel :
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-3814-6
DOI :
10.1109/MWSYM.1997.602985
