Title :
Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region
Author :
Yamamoto, T. ; Kayama, M. ; Kawamura, Y.
Author_Institution :
Frontier Sci. Innovation Center, Osaka Prefecture Univ., Sakai, Japan
fDate :
May 31 2010-June 4 2010
Abstract :
InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light absorption; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1 μm wavelength region optical modulators; InGaAsP-InAlAsP; MBE; molecular beam epitaxy; multiple quantum wells; optical absorption; optical properties; photoluminescence; Electromagnetic wave absorption; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical modulation; Photoluminescence; Quantum well devices; Stimulated emission; Substrates;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516349
