Title :
Large area GaInP2/GaAs/Ge multijunction solar cells for space applications
Author :
Chiang, P.K. ; Kurt, D.D. ; Cavicchi, B.T. ; Bertness, K.A. ; Kurtz, Sarah R. ; Olson, J.M.
Author_Institution :
Spectrolab. Inc., Sylmar, CA, USA
Abstract :
Towards an ultimate objective of lower cost, large area multijunction cells for space applications, we report the demonstration of high efficiency GaInP2/GaAs solar cells on germanium substrates, and highly uniform cell results from a multiwafer MOVPE reactor. A peak efficiency of 24.2% (AM0, 28°C) has been achieved for dual-junctions grown on Ge. Further, the degree of MOVPE layer uniformity required for large area cells has been demonstrated with multiwafer growths on 3 inch diameter GaAs substrates. In addition to this experimental dual-junction result, we present modeling for the next step of this cell technology a triple junction GaInP2/GaAs/Ge cell
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; photovoltaic power systems; semiconductor epitaxial layers; semiconductor growth; space vehicle power plants; vapour phase epitaxial growth; 24.2 percent; 28 C; 3 in; AM0; GaAs; GaAs substrates; GaInP2-GaAs-Ge; GaInP2/GaAs/Ge multijunction solar cells; Ge; MOVPE layer uniformity; dual-junction; dual-junctions; germanium substrates; high efficiency GaInP2/GaAs solar cells; multiwafer MOVPE reactor; multiwafer growth; peak efficiency; space applications; triple junction; Costs; Epitaxial growth; Epitaxial layers; Gallium arsenide; Inductors; Laboratories; Photonic band gap; Photovoltaic cells; Renewable energy resources; Space technology;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.521640
