A high-Q in-plane SOI tuning fork gyroscope

Author

Sharma, Ajit ; Zaman, Faisal M. ; Amini, Babak V. ; Ayazi, Farrokh

Author_Institution

Integrated MEMS Lab., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

467

Abstract

This paper presents the design and implementation of an in-plane solid-mass single-crystal silicon tuning fork gyro that has the potential of attaining sub-deg/hr rate resolutions. A design is devised to achieve high Q in the drive and sense resonant modes (Q_drive=81,000 and Q_sense=64,000) with effective mode decoupling. The gyroscope was fabricated on 40 μm thick silicon-on-insulator (SOI) using a simple two-mask process. The drive and sense resonant modes were balanced electrostatically to within 0.07% of each other and the measured rate results show a sensitivity of 1.25 mV/°/s in a bandwidth of 12 Hz.

Keywords

gyroscopes; inertial navigation; microsensors; semiconductor device measurement; silicon-on-insulator; vibrational modes; 12 Hz; 40 micron; Si-SiO₂; drive modes; electrostatically balanced resonant modes; gyro design; gyroscope; high-Q in-plane SOI tuning fork gyroscope; in-plane solid-mass single-crystal silicon tuning fork gyro; mode decoupling; rate resolutions; sense resonant modes; sensitivity; silicon-on-insulator two-mask process; vibratory micromachined gyroscopes; Acceleration; Electrostatic measurements; Fabrication; Gyroscopes; Laboratories; Micromechanical devices; Resonance; Resonant frequency; Silicon on insulator technology; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2004. Proceedings of IEEE

Print_ISBN

0-7803-8692-2

Type

conf

DOI

10.1109/ICSENS.2004.1426201

Filename

1426201