New device structure for 18-V, high-performance SOI complementary bipolar LSIs using array transistors and flexible U-grooves

Author

Tamaki, Yoichi ; Tsuji, Kousuke ; Ohtani, Osamu ; Nonami, Hideaki ; Tomatsuri, T. ; Yoshida, Euchi ; Hamamoto, Masato ; Nakazato, Norio

Author_Institution

Device Dev. Center, Hitachi Ltd, Tokyo, Japan

fYear

2004

fDate

22-25 March 2004

Firstpage

143

Lastpage

147

Abstract

We have developed a new device structure for high-performance and high-power mixed signal LSIs using 0.35 μm SOI complementary bipolar transistors. The new structure is composed of array transistors for various operating currents and a flexible U-groove layout for high-power transistors. Thermal simulation and test structure measurements showed the advantage of the new structure quantitatively.

Keywords

bipolar integrated circuits; bipolar transistors; large scale integration; mixed analogue-digital integrated circuits; power bipolar transistors; semiconductor device measurement; semiconductor device models; silicon-on-insulator; thermal stability; 0.35 micron; 18 V; Si-SiO₂; array transistors; bipolar device structure; bipolar transistors; complementary bipolar LSI; flexible U-groove layout; high-performance SOI; high-power transistors; mixed signal LSI; thermal simulation; thermal stability; Bipolar transistors; Circuit stability; Flexible printed circuits; Large scale integration; Parasitic capacitance; Resistors; Substrates; Testing; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309468

Filename

1309468