• DocumentCode
    3119172
  • Title

    Synthesis of cubic-GaN nanoparticles using the Na flux method: A novel use for the ultra-high pressure apparatus

  • Author

    Kawamura, Fumio ; Taniguchi, Takashi

  • Author_Institution
    High Pressure Group, Nat. Inst. for Mater. Sci. (NIMS), Tsukuba, Japan
  • fYear
    2010
  • fDate
    May 31 2010-June 4 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Nano-scale cubic-GaN particles were successfully synthesized using the Na flux method under about 500 atm with a belt-type ultra-high pressure apparatus. High pressure nitrogen gas of about 500 atm was sealed in the ultra-high pressure apparatus, which enabled the dissolution of pressurized nitrogen gas into a Ga-Na melt at 500°C without a compressor. In contrast, the conventional Na flux method is carried out under a pressure of 150 atm, the maximum pressure of a nitrogen gas cylinder. A characteristic feature of the process used herein is that the high-pressure reaction gas is dissolved into a flux within the ultra-high pressure apparatus. The c-GaN nanoparticles obtained by this method show excellent crystallinity and a low mixing ratio of hexagonal-GaN, and thus the method solves two common problems in the synthesis of c-GaN.
  • Keywords
    III-V semiconductors; crystal growth from solution; gallium compounds; high-pressure effects; nanofabrication; nanoparticles; semiconductor growth; wide band gap semiconductors; GaN; Na flux method; belt-type ultra-high pressure apparatus; crystallinity; cubic-GaN nanoparticles; high pressure nitrogen gas; pressure 150 atm; temperature 500 degC; Crystalline materials; Crystallization; Fluorescence; Gallium nitride; Materials science and technology; Nanoparticles; Nickel; Nitrogen; Powders; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
  • Conference_Location
    Kagawa
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-5919-3
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2010.5516353
  • Filename
    5516353