A unified model for radiation-resistance of advanced space solar cells

Author

Yamaguchi, Masafumi ; Katsumoto, Shingo ; Amano, Chikara

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

2149

Abstract

1-MeV electron irradiation effects on MBE-grown InGaAs and AlGaAs solar cells have been examined in comparison with our previous results for radiation damage of InP and GaAs solar cells in order to clarify radiation-resistance of advanced space solar cells. Moreover, 1-MeV electron irradiation results of several space solar cells such as InP, InGaP, InGaAsP, GaAs, AlGaAs, InGaAs, Si, Ge, and CuInSe₂ cells have also been analyzed by considering their damage constants, bandgap energies and optical absorption coefficients. We believe that this study will provide a unified model for radiation-resistance of advanced space solar cells

Keywords

III-V semiconductors; aluminium compounds; electron beam effects; energy gap; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical constants; photovoltaic power systems; semiconductor epitaxial layers; semiconductor growth; solar cells; space vehicle power plants; 1 MeV; AlGaAs; AlGaAs solar cells; CuInSe₂; CuInSe₂ solar cells; GaAs; GaAs solar cells; Ge; Ge solar cells; InGaAs; InGaAs solar cells; InGaAsP; InGaAsP solar cells; InGaP; InGaP solar cells; InP; InP solar cells; MBE-grown solar cells; Si; Si solar cells; advanced space solar cells; bandgap energies; damage constants; electron irradiation effects; optical absorption coefficients; radiation damage; radiation-resistance; Absorption; Degradation; Electron optics; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.521647

Filename

521647