DocumentCode
3119298
Title
Leakage current correction in quasi-static C-V measurements
Author
Schmitz, J. ; Weusthof, M.H.H. ; Hof, A.J.
Author_Institution
MESA Res. Inst., Twente Univ., Enschede, Netherlands
fYear
2004
fDate
22-25 March 2004
Firstpage
179
Lastpage
181
Abstract
The gate current in a MOS structure can deform the result of a quasi-static capacitance-voltage measurement. In this paper, several correction methods are presented and discussed to compensate for this effect. Limitations of all methods are quantified and workarounds are proposed.
Keywords
MOS capacitors; MOSFET; compensation; leakage currents; semiconductor device measurement; MOS capacitors; MOS transistors; gate current effect; leakage current correction; linear ramp; quasistatic C-V measurements; tunnel current; two sweep rates; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Dielectric measurements; Gate leakage; High-K gate dielectrics; Interface states; Leakage current; MOS capacitors; MOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on
Print_ISBN
0-7803-8262-5
Type
conf
DOI
10.1109/ICMTS.2004.1309475
Filename
1309475
Link To Document