A test chip to characterise P-MOS transistors produced using a novel organometallic material

A test chip is reported to characterise MOS transistors with a platinum gate fabricated using a solid organometallic material. Threshold and source-drain characteristics are presented along with oxide leakage measurements. These results are compared with aluminium gate transistors manufactured on the same substrate. Both sets of characteristics are very similar with the major difference being that the platinum gate devices have a lower sub-threshold slope.