Characterization and model of 4-terminal RF CMOS with bulk effect

Author

Yang, M.T. ; Wang, Y.J. ; Yeh, T.J. ; Ho, Pahicia P C ; Chia, Y.T. ; Young, K.L.

Author_Institution

TSMC, Hsin-Chu, Taiwan

fYear

2004

fDate

22-25 March 2004

Firstpage

189

Lastpage

193

Abstract

Special test structures using separated source and bulk contacts with the 3^rd GSG probe for the substrate bias are described. These test structures allow characterizing 4-terminal MOSFETs with a standard two-port Network Analyzer. The high-frequency behavior of bulk effect in MOSFETs is studied at different bias conditions for a 0.18 μm RF CMOS technology. Measurement result of RF NMOSFET shows that a good accuracy of the 4-terminal RF MOSFET modeling is achieved. The validity and accuracy of our approach is verified and analyzed from two-port Y-parameter results.

Keywords

CMOS integrated circuits; MOSFET; S-parameters; SPICE; equivalent circuits; field effect MMIC; microwave field effect transistors; semiconductor device models; semiconductor device testing; 4-terminal MOSFET; 4-terminal RF CMOS; CMOS model; GSG probe; MOSFET substrate components; S-parameter; SPICE simulation; Y-parameter; bulk effect; high-frequency behavior; scalable BSIM3v3 core model; separated source contacts; small-signal equivalent circuit; standard two-port network analyzer; substrate bias; test structures; CMOS digital integrated circuits; CMOS process; CMOS technology; Circuit testing; Interference; Lithography; MOSFET circuits; Probes; Radio frequency; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309477

Filename

1309477