Title :
Solar cells on the base of monocrystalline GaAs with higher radiation and temperature stability
Author :
Kagan, H. ; Gridoryeva, G. ; Nuller, T.
Author_Institution :
Sci. Production Amalgamation, KVANT, Moscow, Russia
Abstract :
New solar cells, manufactured on the basis of monocrystalline GaAs doped with silicon and produced by an horizontally oriented crystallization method, are discussed for space power applications in high radiation and temperature conditions
Keywords :
III-V semiconductors; aerospace testing; gallium arsenide; photovoltaic power systems; semiconductor device testing; semiconductor doping; silicon; solar cells; space vehicle power plants; GaAs:Si; applications; horizontally oriented crystallization method; monocrystalline semiconductors; radiation stability; solar cell doping; space power; temperature stability; testing; Crystallization; Dark current; Diodes; Gallium arsenide; Photovoltaic cells; Production; Silicon; Stability; Temperature; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.521669
