Air-gap capacitance-Voltage analysis of p-InP surfaces

Author

Yoshida, Toshiyuki ; Hashizume, Tamotsu

Author_Institution

Interdiscipl. Fac. of Sci. & Eng., Shimane Univ., Matsue, Japan

fYear

2010

fDate

May 31 2010-June 4 2010

Firstpage

1

Lastpage

3

Abstract

A novel air-gap capacitance-Voltage (C-V) method is introduced. This method is powerful tool for characterizing electrical properties of "free" or ultrathin-insulator-covered surfaces for III-V semiconductors. Air-gap C-V characteristics of p-InP surfaces with and without natural oxide are reported for the first time. Unexpectedly, the surface with natural oxide gives relatively low-density surface states. Surfaces covered with ultrathin Al₂O₃ film were also measured, indicating the importance for further investigation and optimization of surface process.

Keywords

III-V semiconductors; alumina; atomic layer deposition; capacitance measurement; indium compounds; semiconductor epitaxial layers; surface states; thin films; voltage measurement; III-V semiconductors; InP; InP-Al₂O₃; air-gap capacitance-voltage analysis; atomic layer deposition; electrical properties; low-density surface states; natural oxide; ultrathin film; ultrathin-insulator-covered surfaces; Air gaps; Aluminum oxide; Capacitance-voltage characteristics; Electrodes; FETs; III-V semiconductor materials; Indium phosphide; Insulation; Reflectivity; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide & Related Materials (IPRM), 2010 International Conference on

Conference_Location

Kagawa

ISSN

1092-8669

Print_ISBN

978-1-4244-5919-3

Type

conf

DOI

10.1109/ICIPRM.2010.5516369

Filename

5516369