Title :
Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development
Author :
Liau, Geng-Ying ; Lin, Heng-Kuang ; Chiu, Pei-Chin ; Ho, Han-Chieh ; Chyi, Jen-Inn ; Ko, Chih-Hsin ; Kuan, Ta-Ming ; Hsieh, Meng-Kuei ; Lee, Wen-Chin ; Wann, Clement H.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fDate :
May 31 2010-June 4 2010
Abstract :
Antimonide-based heterostructural p-channel HFET epitaxies consisting of an In0.44Ga0.56Sb quantum well located between AlSb barriers were developed by molecular beam epitaxy. The In0.44Ga0.56Sb channel layer was compressively strained to enhance hole mobility. Room-temperature Hall measurements to the as-grown materials exhibited a hole mobility as high as 895 cm2/V s. Ti/Pt/Au and Pt/Ti/Pt/Au metals were utilized in Schottky gate metallization processes for evaluating their effects on the device performance. Considering the diffusivity of Pt metals, the devices with as-deposited and annealed Pt-based gates were characterized simultaneously and compared with the ones with Ti-based gates. The devices with Ti-based gates yielded superior dc and rf performances to those with Pt-based gates.
Keywords :
aluminium compounds; gallium compounds; gold; high electron mobility transistors; hole mobility; indium compounds; platinum; titanium; AlSb; In0.44Ga0.56Sb; Pt-Ti-Pt-Au; Schottky gate metallization processes; antimonide-based heterostructural p-channel HFET epitaxies; hall measurements; molecular beam epitaxy; temperature 293 K to 298 K; Annealing; Epitaxial growth; FETs; Gold; HEMTs; III-V semiconductor materials; MODFETs; Molecular beam epitaxial growth; Semiconductor device manufacture; Transconductance; HFETs; InGaSb; p-channel;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516381
