A novel technique for integrated RF-MEMS system-on-chip

Author

Chen, Henry J H ; Chuen-Uan Huang ; Tseng, Kuo Yu ; Hsu Chun Chen ; Wang, S.S. ; Huang, Star R S

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

615

Abstract

We present a novel platform technology, EPIES (electroplating and isotropic etching silicon), for integrated RF-MEMS system-on-chip. Thick Cu structures were deposited by electroplating and released by using XeF₂ isotropic Si etching to remove Si underneath the plated structures. The driving voltage of demonstrated Cu relay/switch is confirmed by HFSS simulation. This platform technology is simple and easy to use, IC process compatible, and suitable for the integrated RF-MEMS-SoC.

Keywords

copper; electroplating; etching; micromachining; microrelays; microswitches; semiconductor device metallisation; system-on-chip; Cu relay/switch; Cu structure release; Cu-Si; EPIES platform technology; HFSS simulation; IC process compatible technology; RF-MEMS-SoC; Si; XeF₂; XeF₂ isotropic Si etching; driving voltage; electroplating; electroplating and isotropic etching silicon; integrated RF-MEMS system-on-chip; Cathodes; Conductivity; Copper; Etching; Millimeter wave radar; Millimeter wave technology; Radio frequency; Radiofrequency microelectromechanical systems; Switches; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2004. Proceedings of IEEE

Print_ISBN

0-7803-8692-2

Type

conf

DOI

10.1109/ICSENS.2004.1426241

Filename

1426241