Title :
Effect of microstructural evolution on optical properties of InGaN/GaN multiple quantum wells
Author :
Lin, Yen-Sheng ; Lin, Kun-Hong ; Wu, Chen-Hung ; Feng, Shih-Wei ; Kuo, Ho-Hung
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
Abstract :
The microstructure variations with various well thickness of InGaN/GaN MQWs were demonstrated. In 2 nm well thickness, QDs were better confined near the designated QWs layers and might resulted in a higher radiative efficiency due to the less strain energy.
Keywords :
III-V semiconductors; crystal microstructure; gallium compounds; indium compounds; internal stresses; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; microstructural property; optical properties; photoluminescence; radiative efficiency; semiconductor multiple quantum wells; size 2 nm; strain energy; Annealing; Capacitive sensors; Gallium nitride; Indium; Lattices; Microstructure; Potential well; Stacking; Strain control; Temperature;
Conference_Titel :
OptoElectronics and Communications Conference, 2009. OECC 2009. 14th
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-4102-0
Electronic_ISBN :
978-1-4244-4103-7
DOI :
10.1109/OECC.2009.5216919
