DocumentCode
3120439
Title
Advanced STI patterning for 70 nm DRAM technology and beyond
Author
Stavrev, Momtchil ; Scire, Alessia ; Vogt, Mirko ; Klingbeil, Patrick ; Liao, Chun-Cheng ; Gruss, Stefan ; Froehlich, Hans-Georg ; Mothes, Kerstin ; Bauch, Lothar ; Wege, Stephan ; Thyssen, Norbert
Author_Institution
Infineon Technol. SC300 GmbH & Co KG, Dresden, Germany
fYear
2004
fDate
4-6 May 2004
Firstpage
84
Lastpage
88
Abstract
This paper presents the results on the patterning of shallow trench isolation for the 70 nm DRAM technology node on 300 mm wafers. Using a new triple hard mask approach incorporating a carbon film patterns with 70 nm CD and STI depth of about 250 nm could be achieved.
Keywords
DRAM chips; amorphous state; carbon; hydrogen; isolation technology; masks; nanolithography; thin films; 250 nm; 300 mm; 70 nm; C:H; CD patterning; DRAM technology node; STI patterning; Si; carbon film; shallow trench isolation patterning; triple hard mask; Etching; Helium; Lithography; Optical films; Plasma applications; Plasma chemistry; Polymer films; Random access memory; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN
0-7803-8312-5
Type
conf
DOI
10.1109/ASMC.2004.1309541
Filename
1309541
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