Title :
Advanced STI patterning for 70 nm DRAM technology and beyond
Author :
Stavrev, Momtchil ; Scire, Alessia ; Vogt, Mirko ; Klingbeil, Patrick ; Liao, Chun-Cheng ; Gruss, Stefan ; Froehlich, Hans-Georg ; Mothes, Kerstin ; Bauch, Lothar ; Wege, Stephan ; Thyssen, Norbert
Author_Institution :
Infineon Technol. SC300 GmbH & Co KG, Dresden, Germany
Abstract :
This paper presents the results on the patterning of shallow trench isolation for the 70 nm DRAM technology node on 300 mm wafers. Using a new triple hard mask approach incorporating a carbon film patterns with 70 nm CD and STI depth of about 250 nm could be achieved.
Keywords :
DRAM chips; amorphous state; carbon; hydrogen; isolation technology; masks; nanolithography; thin films; 250 nm; 300 mm; 70 nm; C:H; CD patterning; DRAM technology node; STI patterning; Si; carbon film; shallow trench isolation patterning; triple hard mask; Etching; Helium; Lithography; Optical films; Plasma applications; Plasma chemistry; Polymer films; Random access memory; Silicon; Stress;
Conference_Titel :
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN :
0-7803-8312-5
DOI :
10.1109/ASMC.2004.1309541
