Title :
High-k dielectrics for use as ISFET gate oxides
Author :
van der Wal, P.D. ; Briand, D. ; Mondin, G. ; Jenny, S. ; Jeanneret, S. ; Millon, C. ; Roussel, H. ; Dubourdieu, C. ; de Rooij, N.F.
Author_Institution :
Inst. of Microtechnol., Neuchatel Univ., Switzerland
Abstract :
Two binary oxides, Ta2O5 and HfO2, were investigated for use as the pH-sensitive gate oxide of ion-sensitive field-effect transistors (ISFETs). Both materials have been extensively studied as high-k materials for advanced CMOS technologies. They are both deposited by CVD methods, which enable batch processing of several wafers at the same time. After deposition, these materials are thermally annealed, during which step the oxide properties are optimized for use as ISFET gate oxide. The performance of the ISFETs is evaluated by characterization of several parameters including the pH-sensitivity, drift and light sensitivity.
Keywords :
annealing; batch processing (industrial); chemical sensors; chemical vapour deposition; dielectric thin films; hafnium compounds; ion sensitive field effect transistors; pH measurement; permittivity; semiconductor device testing; tantalum compounds; CMOS technologies; CVD methods; HfO2; ISFET gate oxides; Ta2O5; batch processing; drift; high-k dielectrics; ion-sensitive field-effect transistors; light sensitivity; optimized oxide properties; pH-sensitive gate oxide; thermally annealed materials; Annealing; CMOS technology; Crystallization; Diodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Semiconductor films; Silicon compounds; Temperature sensors;
Conference_Titel :
Sensors, 2004. Proceedings of IEEE
Print_ISBN :
0-7803-8692-2
DOI :
10.1109/ICSENS.2004.1426257
