DocumentCode
3120470
Title
An improved process, metrology and methodology for shallow trench isolation etch
Author
Baum, Chris ; Gaddam, Sreedhar
Author_Institution
Kilby Center, Texas Instrum. Inc., Dallas, TX, USA
fYear
2004
fDate
4-6 May 2004
Firstpage
93
Lastpage
97
Abstract
This paper discusses the development of an improved process for shallow trench isolation (STI) etch, the implementation of scatterometer for metrology and a new methodology for improved STI etch process control and monitoring. Cp/Cpk improvement, reduction in or elimination of process related excursions, higher mean time between clean (MTBC), improved tool availability, improved transistor performance and yield that resulted with the implementation of new process and metrology are reported.
Keywords
elemental semiconductors; etching; field effect transistors; isolation technology; silicon; statistical process control; thickness measurement; Si; etch process control; improved tool availability; improved transistor performance; metrology; process monitoring; scatterometer; shallow trench isolation etching; Etching; Instruments; Metrology; Monitoring; Optical films; Process control; Resists; Silicon; Strips; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN
0-7803-8312-5
Type
conf
DOI
10.1109/ASMC.2004.1309543
Filename
1309543
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