Title :
Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study
Author :
Rodilla, H. ; Gonzalez, T. ; Malmkvist, M. ; Lefebvre, E. ; Moschetti, G. ; Grahn, J. ; Mateos, J.
Author_Institution :
Dept. Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
fDate :
May 31 2010-June 4 2010
Abstract :
In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance. The comparison between intrinsic MC simulation results for isolated-gate and Schottky-gate HEMTs reveals a strong influence of the native oxide on the dynamic behavior of the devices, mainly on Cgs, gm and fc.
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; aluminium compounds; equivalent circuits; high electron mobility transistors; impact ionisation; indium compounds; I-V curves; InAs-AlSb; Monte Carlo study; Schottky-gate HEMT; ac performance; dc performance; dynamic behavior; high electron mobility transistors; impact ionization; isolated-gate HEMT; native oxide; small signal equivalent circuit parameters; Circuit simulation; Electron mobility; Etching; HEMTs; Impact ionization; Isolation technology; Leakage current; MODFETs; Monte Carlo methods; Oxidation;
Conference_Titel :
Indium Phosphide & Related Materials (IPRM), 2010 International Conference on
Conference_Location :
Kagawa
Print_ISBN :
978-1-4244-5919-3
DOI :
10.1109/ICIPRM.2010.5516410
