DocumentCode :
3120776
Title :
Ion implant process monitoring with a dynamic surface photo-charge technique
Author :
Tsidilkovski, Edward ; Crocker, Kendra ; Steeples, Kenneth
Author_Institution :
QC Solutions Inc, North Billerica, MA, USA
fYear :
2004
fDate :
4-6 May 2004
Firstpage :
181
Lastpage :
186
Abstract :
A detailed parametric study was carried out over the course of approximately one year to determine the measurement sensitivity and repeatability of an in-line surface photo-charge metrology system for major implant parameters used in an established, high volume, 0.35 μm CMOS process. The critical p-channel transistor implant processes; Threshold Voltage Adjust and Halo were used to characterize the metrology system. Dose variations as small as 1.5% have been measured with statistical accuracy, enabling improvements in process control to be quantified in real time. Long-term system repeatability of less than 1% (1σ) for a wide variety of implants has allowed the sensitive visibility of process drift or spike excursions to be highlighted in real-time.
Keywords :
CMOS integrated circuits; arsenic; boron; ion implantation; process monitoring; surface photovoltage; As; B; CMOS process; drift excursions; dynamic surface photocharge technique; ion implant process monitoring; metrology system; p channel transistor; sensitive visibility; spike excursion; system repeatability; Circuit testing; Corona; Implants; Ion implantation; Measurement techniques; Monitoring; Real time systems; Semiconductor materials; Silicon; Volume measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN :
0-7803-8312-5
Type :
conf
DOI :
10.1109/ASMC.2004.1309562
Filename :
1309562
Link To Document :
بازگشت