Study of Pt/TiO2/SiC Schottky diode based gas sensor

Metal reactive oxide silicon carbide (MROSiC) is attractive for gas sensing applications in harsh, high temperature environments. We present the hydrogen and propene gas sensing performance of a Pt/TiO₂/SiC device. This sensor has been employed as a Schottky diode, and is capable of operating at temperatures around 650 °C. The sensors were exposed to different concentrations of these analyte gases over the temperature range of 300 to 650 °C. The response was measured as the shift in voltage when a constant forward bias current 0.5 mA was applied. Voltage shifts of approximately 4.5 V for 1% hydrogen in nitrogen and up to 1 V for 1% hydrogen in synthetic air were observed. Largest responses were observed at operating temperature of 530 °C.