A study on rapid development and ramp-up of high density DRAM using an advanced e-beam inspection system

Author

Lee, Jongpil ; Baek, Hyunchul ; Song, Ypngwook ; Lee, Paul Seungyong ; Gasser, Dustin ; Price, David W.

Author_Institution

Hynix Semicond. Inc., Kyonggi, South Korea

fYear

2004

fDate

4-6 May 2004

Firstpage

227

Lastpage

231

Abstract

This paper discusses about the effectiveness of advanced e-beam inspection. Using an e-beam inspection system, the eS20XP (SN 158) from KLA-Tencor Corporation, DRAM development and ramp-up was accelerated. This was accomplished by analyzing the yield relevant electrical defects for process optimization at the critical steps of the wafer fabrication process flow. Through case studies on Self-Aligned Contact (SAC) poly plug layers, it was demonstrated that electrical process monitoring identified key issued in early stages of device development. These case studies also assisted in defining the narrow process window for the advanced 110 nm design rule DRAM devices at Hynix Semiconductor Inc.

Keywords

DRAM chips; electron beam testing; failure analysis; inspection; integrated circuit yield; process monitoring; 110 nm; KLA-Tencor Corporation; e-beam inspection system; electrical defects; electrical process monitoring; high density DRAM; process optimization; ramp-up acceleration; self aligned contact poly plug layers; wafer fabrication process flow; Condition monitoring; Contacts; Electron optics; Inspection; Metrology; Optical feedback; Optical films; Random access memory; Virtual colonoscopy; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop

Print_ISBN

0-7803-8312-5

Type

conf

DOI

10.1109/ASMC.2004.1309571

Filename

1309571