Title : 
Challenge of a multiple-valued technology in recent deep-submicron VLSI
         
        
        
            Author_Institution : 
Dept. of Comput. & Math. Sci., Tohoku Univ., Sendai, Japan
         
        
        
        
        
        
            Abstract : 
A logic-in-memory VLSI architecture based on multiple-valued floating-gate MOS pass-transistor logic is proposed to solve a communication bottleneck between modules in the recent deep-submicron VLSI. Moreover, a multiple-valued current-mode circuit based on dual-rail differential logic is also proposed as a candidate suitable for self-checking and asynchronous VLSI systems. Finally, the advantage of the above multiple-valued circuit technologies is shown by using design examples
         
        
            Keywords : 
MOS logic circuits; VLSI; logic testing; multivalued logic circuits; asynchronous VLSI systems; communication bottleneck; deep-submicron VLSI; design examples; dual-rail differential logic; logic-in-memory VLSI architecture; multiple-valued circuit technologies; multiple-valued floating-gate MOS pass-transistor logic; multiple-valued technology; self-checking; CADCAM; CMOS technology; Circuit synthesis; Circuit testing; Computer aided manufacturing; Logic circuits; MOSFETs; Nonvolatile memory; Switching circuits; Very large scale integration;
         
        
        
        
            Conference_Titel : 
Multiple-Valued Logic, 2001. Proceedings. 31st IEEE International Symposium on
         
        
            Conference_Location : 
Warsaw
         
        
        
            Print_ISBN : 
0-7695-1083-3
         
        
        
            DOI : 
10.1109/ISMVL.2001.924579