• DocumentCode
    3121282
  • Title

    All-oxide magnetic field sensor

  • Author

    Solignac, A. ; Guerrero, R. ; Pannetier-Lecoeur, M. ; Lecoeur, Ph ; Agnus, G.

  • Author_Institution
    SPEC, CEA Saclay, Gif-sur-Yvette, France
  • fYear
    2011
  • fDate
    Nov. 28 2011-Dec. 1 2011
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    Spin electronics sensors can be used as magnetic field sensors in various applications such as current sensing, non-destructive testing or compasses. While metallic layers are used for most of the room temperature applications, oxide materials exhibit very good performances for low temperature applications. Here we present the principle of an all-oxide field sensor, which could offer field sensitivity in the sub-femtotesla range. We present the magnetic tunnel junction developed for this purpose and give the performance in term of magnetoresistance and noise.
  • Keywords
    magnetic field measurement; magnetic multilayers; magnetic sensors; magnetic tunnelling; magnetoresistance; all-oxide magnetic field sensor; compass; current sensing; magnetic tunnel junction; magnetoresistance; metallic layer; nondestructive testing; oxide material; spin electronic sensor; subfemtotesla range; temperature 293 K to 298 K; Electrodes; Junctions; Magnetic field measurement; Magnetic tunneling; Magnetoresistance; Noise; Sensitivity; magnetic sensors; oxides; spin electronics; tunnel junctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensing Technology (ICST), 2011 Fifth International Conference on
  • Conference_Location
    Palmerston North
  • ISSN
    2156-8065
  • Print_ISBN
    978-1-4577-0168-9
  • Type

    conf

  • DOI
    10.1109/ICSensT.2011.6137075
  • Filename
    6137075