DocumentCode :
3121282
Title :
All-oxide magnetic field sensor
Author :
Solignac, A. ; Guerrero, R. ; Pannetier-Lecoeur, M. ; Lecoeur, Ph ; Agnus, G.
Author_Institution :
SPEC, CEA Saclay, Gif-sur-Yvette, France
fYear :
2011
fDate :
Nov. 28 2011-Dec. 1 2011
Firstpage :
89
Lastpage :
92
Abstract :
Spin electronics sensors can be used as magnetic field sensors in various applications such as current sensing, non-destructive testing or compasses. While metallic layers are used for most of the room temperature applications, oxide materials exhibit very good performances for low temperature applications. Here we present the principle of an all-oxide field sensor, which could offer field sensitivity in the sub-femtotesla range. We present the magnetic tunnel junction developed for this purpose and give the performance in term of magnetoresistance and noise.
Keywords :
magnetic field measurement; magnetic multilayers; magnetic sensors; magnetic tunnelling; magnetoresistance; all-oxide magnetic field sensor; compass; current sensing; magnetic tunnel junction; magnetoresistance; metallic layer; nondestructive testing; oxide material; spin electronic sensor; subfemtotesla range; temperature 293 K to 298 K; Electrodes; Junctions; Magnetic field measurement; Magnetic tunneling; Magnetoresistance; Noise; Sensitivity; magnetic sensors; oxides; spin electronics; tunnel junctions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensing Technology (ICST), 2011 Fifth International Conference on
Conference_Location :
Palmerston North
ISSN :
2156-8065
Print_ISBN :
978-1-4577-0168-9
Type :
conf
DOI :
10.1109/ICSensT.2011.6137075
Filename :
6137075
Link To Document :
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