Title :
All-oxide magnetic field sensor
Author :
Solignac, A. ; Guerrero, R. ; Pannetier-Lecoeur, M. ; Lecoeur, Ph ; Agnus, G.
Author_Institution :
SPEC, CEA Saclay, Gif-sur-Yvette, France
fDate :
Nov. 28 2011-Dec. 1 2011
Abstract :
Spin electronics sensors can be used as magnetic field sensors in various applications such as current sensing, non-destructive testing or compasses. While metallic layers are used for most of the room temperature applications, oxide materials exhibit very good performances for low temperature applications. Here we present the principle of an all-oxide field sensor, which could offer field sensitivity in the sub-femtotesla range. We present the magnetic tunnel junction developed for this purpose and give the performance in term of magnetoresistance and noise.
Keywords :
magnetic field measurement; magnetic multilayers; magnetic sensors; magnetic tunnelling; magnetoresistance; all-oxide magnetic field sensor; compass; current sensing; magnetic tunnel junction; magnetoresistance; metallic layer; nondestructive testing; oxide material; spin electronic sensor; subfemtotesla range; temperature 293 K to 298 K; Electrodes; Junctions; Magnetic field measurement; Magnetic tunneling; Magnetoresistance; Noise; Sensitivity; magnetic sensors; oxides; spin electronics; tunnel junctions;
Conference_Titel :
Sensing Technology (ICST), 2011 Fifth International Conference on
Conference_Location :
Palmerston North
Print_ISBN :
978-1-4577-0168-9
DOI :
10.1109/ICSensT.2011.6137075