• DocumentCode
    3121365
  • Title

    Thermal conductivity measurements of nitrogen-doped Ge2Sb2Te5

  • Author

    Tan, Chun Chia ; Zhao, Rong ; Shi, Luping ; Chong, Tow Chong ; Bain, James A. ; Schlesinger, T.E. ; Malen, Jonathan A. ; Ong, Wee Liat

  • Author_Institution
    Data Storage Inst., Singapore, Singapore
  • fYear
    2011
  • fDate
    7-9 Nov. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The thermal conductivity of nitrogen-doped Ge2Sb2Te5 (N-GST) was analyzed using Frequency Domain Thermoreflectance (FDTR). The thermal conductivity of amorphous N-GST (~0.15 W/m-K) was not found to change significantly as the nitrogen concentration was raised from 0 at% to ~6 at%, possibly due to the huge amount of phonon scattering in the disordered films. The thermal conductivity of crystalline N-GST films was found to increase initially with increasing N content, but then to decrease upon further N addition. X-ray diffraction spectra of N-GST films show increasing defect density that correlates with the decrease in thermal conductivity of the crystalline films at higher nitrogen content.
  • Keywords
    X-ray diffraction; amorphous semiconductors; antimony compounds; doping profiles; germanium compounds; nitrogen; semiconductor thin films; thermal conductivity; FDTR; Ge2Sb2Te5:N; X-ray diffraction spectra; amorphous materials; crystalline films; defect density; frequency domain thermoreflectance; nitrogen concentration; thermal conductivity; Conductivity; Conductivity measurement; Films; Nitrogen; Phase change random access memory; Thermal conductivity; Therml conductivity; phase change materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1428-3
  • Type

    conf

  • DOI
    10.1109/NVMTS.2011.6137080
  • Filename
    6137080