DocumentCode :
3121365
Title :
Thermal conductivity measurements of nitrogen-doped Ge2Sb2Te5
Author :
Tan, Chun Chia ; Zhao, Rong ; Shi, Luping ; Chong, Tow Chong ; Bain, James A. ; Schlesinger, T.E. ; Malen, Jonathan A. ; Ong, Wee Liat
Author_Institution :
Data Storage Inst., Singapore, Singapore
fYear :
2011
fDate :
7-9 Nov. 2011
Firstpage :
1
Lastpage :
4
Abstract :
The thermal conductivity of nitrogen-doped Ge2Sb2Te5 (N-GST) was analyzed using Frequency Domain Thermoreflectance (FDTR). The thermal conductivity of amorphous N-GST (~0.15 W/m-K) was not found to change significantly as the nitrogen concentration was raised from 0 at% to ~6 at%, possibly due to the huge amount of phonon scattering in the disordered films. The thermal conductivity of crystalline N-GST films was found to increase initially with increasing N content, but then to decrease upon further N addition. X-ray diffraction spectra of N-GST films show increasing defect density that correlates with the decrease in thermal conductivity of the crystalline films at higher nitrogen content.
Keywords :
X-ray diffraction; amorphous semiconductors; antimony compounds; doping profiles; germanium compounds; nitrogen; semiconductor thin films; thermal conductivity; FDTR; Ge2Sb2Te5:N; X-ray diffraction spectra; amorphous materials; crystalline films; defect density; frequency domain thermoreflectance; nitrogen concentration; thermal conductivity; Conductivity; Conductivity measurement; Films; Nitrogen; Phase change random access memory; Thermal conductivity; Therml conductivity; phase change materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
Type :
conf
DOI :
10.1109/NVMTS.2011.6137080
Filename :
6137080
Link To Document :
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