Optimising TrenchMOS devices for power switching applications

It is well-known that TrenchMOS devices are superior to conventional planar DMOS equivalents in giving lower Rds(on) for a given area. In addition, the use of Trench structures also gives significantly better switching performance, especially for higher voltages. For power switching applications such as on-board DC-DC converters, switching losses are at least as important as on-state losses. It is therefore important that the design of the PowerMOS switch is optimised for low switching losses as well as minimising Rds(on). In this respect TrenchMOS has significant advantage over conventional DMOS devices, especially in the voltage range 100-200 V, suitable for use in telecom power supplies (24-48 V)