Title :
The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage current characteristics in high dielectric constant and ferroelectric thin films
Author :
Xiao, Y.G. ; Tang, M.H. ; Li, J.C.
Author_Institution :
Key Lab. for Low Dimensional Mater. & Applic. Technol. of Minist. of Educ., Xiangtan Univ., Xiangtan, China
Abstract :
Taking into account the electric field dependence of carrier mobility and permittivity, the current-voltage relationship dominated by space-charge-limited conduction for high dielectric constant ferroelectric thin films, consisting of (Ba, Sr)TiO3 and Pb(Zr, Ti)O3 is derived. Typical current-voltage characteristics are given by the derived relationship with empirical values for its parameters. The obtained current characteristics effectively account for the high-field current characteristics including the quasi-Ohmic region and the small power exponent law region in the electric field ranging from 106 V/cm to 107 V/cm observed experimentally in a very thin BaTiO3 single crystal in a previous study [Appl. Phys. Lett. 86 (2005) 152903].
Keywords :
barium compounds; carrier mobility; ferroelectric thin films; lead compounds; leakage currents; ohmic contacts; permittivity; space charge; strontium compounds; (BaSr)TiO3; Pb(ZrTi)O3; current-voltage relationship; electric field; ferroelectric thin films; field-dependent carrier mobility; high dielectric constant; permittivity; quasi-Ohmic region; space-charge-limited conduction; space-charge-limited leakage current; Barium; Crystals; Dielectric constant; Electric fields; Leakage current; Permittivity; Titanium compounds; Current-voltage characteristics; Ferroelectric thin films; Field dependent permittivity; Space charge limited current;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137088
