DocumentCode :
3121590
Title :
Design and fabrication of breakover diode with improved parameter control
Author :
Hayes, J.M. ; Leveugle, C. ; Walsh, P.R. ; Murray, A.F.J. ; Lane, W.A.
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
fYear :
1999
fDate :
1999
Firstpage :
42491
Lastpage :
42494
Abstract :
In this work, a novel breakover diode (BOD) design has been proposed and developed allowing the generation of a range of triggering voltages (20-300 V) independent of the starting material´s resistivity, through modification of a single process step. Moreover, absolute control over the triggering (forward blocking) voltage (VBF) has been improved to approximately ±1.5%. In addition, the dependence of other critical device parameters, such as the breakover voltage (VBO), breakover current (IBO) and holding current (Ih), on the forward blocking voltage has been virtually eliminated
Keywords :
power semiconductor diodes; 20 to 300 V; breakover current; breakover diode; breakover voltage; critical device parameters; design; fabrication; forward blocking voltage; holding current; parameter control improvement; triggering voltages generation;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Recent Advances in Power Devices (Ref. No. 1999/104), IEE Colloquium on
Conference_Location :
London
Type :
conf
DOI :
10.1049/ic:19990595
Filename :
789938
Link To Document :
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