Title :
Pressure contacted IGBTs
Author_Institution :
Westcode Semicond. Ltd., Chippenham, UK
Abstract :
Some of the design considerations for the implementation of a bondless, pressure contacted IGBT are outlined. Whilst the electrical performance of each type of device is similar, some differences in the mechanical and thermal properties of pressure contacted devices to those exhibited by substrate mounted devices are highlighted. These differences are such that bondless pressure contact IGBT devices may offer exploitable advantages in some applications
Keywords :
power bipolar transistors; applications; bondless pressure-contacted IGBTs; design considerations; device advantages; electrical performance; mechanical properties; thermal properties;
Conference_Titel :
Recent Advances in Power Devices (Ref. No. 1999/104), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19990597
