Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films

Author

Chen, Min-Chen ; Chang, Ting-Chang ; Huang, Sheng-Yao ; Sze, Simon M. ; Tsai, Ming-Jinn

Author_Institution

Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2011

fDate

7-9 Nov. 2011

Firstpage

1

Lastpage

4

Abstract

In this study, the resistive switching characteristics of the resistive random access memory device based on sputter-deposited IGZO thin film were investigated. The bipolar switching behavior of Ti/IGZO/TiN and ITO/IGZO/TiN devices is regarded as the performance of the formation/disruption of conducting filaments in IGZO thin film. Furthermore, the influence of electrode material is investigated through Pt/IGZO/TiN devices, which perform the unipolar and bipolar behavior while applying bias on Pt and TiN electrode, respectively. In comparison with Ti/IGZO/TiN device, the electrical characteristic of Pt/IGZO/TiN device can be affected by the oxygen content in the sputtering gas mixture of IGZO film. Experimental results demonstrate that the switching behavior is selective by using proper electrode.

Keywords

III-VI semiconductors; electrodes; gallium compounds; indium compounds; random-access storage; semiconductor thin films; sputter deposition; switching circuits; tin compounds; titanium compounds; wide band gap semiconductors; zinc compounds; ITO; Ti-InGaZnO-TiN; bipolar switching behavior; electrode material; gas mixture sputtering; nonvolatile resistance memory switching behaviors; resistive random access memory device; sputter-deposited thin film; Electrodes; Films; Ions; Nonvolatile memory; Resistance; Switches; Tin; IGZO thin film; RRAM; nonvolatile memory; resistance switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual

Conference_Location

Shanghai

Print_ISBN

978-1-4577-1428-3

Type

conf

DOI

10.1109/NVMTS.2011.6137093

Filename

6137093