Title :
Studies on nonvolatile resistance memory switching behaviors in InGaZnO thin films
Author :
Chen, Min-Chen ; Chang, Ting-Chang ; Huang, Sheng-Yao ; Sze, Simon M. ; Tsai, Ming-Jinn
Author_Institution :
Dept. of Phys., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this study, the resistive switching characteristics of the resistive random access memory device based on sputter-deposited IGZO thin film were investigated. The bipolar switching behavior of Ti/IGZO/TiN and ITO/IGZO/TiN devices is regarded as the performance of the formation/disruption of conducting filaments in IGZO thin film. Furthermore, the influence of electrode material is investigated through Pt/IGZO/TiN devices, which perform the unipolar and bipolar behavior while applying bias on Pt and TiN electrode, respectively. In comparison with Ti/IGZO/TiN device, the electrical characteristic of Pt/IGZO/TiN device can be affected by the oxygen content in the sputtering gas mixture of IGZO film. Experimental results demonstrate that the switching behavior is selective by using proper electrode.
Keywords :
III-VI semiconductors; electrodes; gallium compounds; indium compounds; random-access storage; semiconductor thin films; sputter deposition; switching circuits; tin compounds; titanium compounds; wide band gap semiconductors; zinc compounds; ITO; Ti-InGaZnO-TiN; bipolar switching behavior; electrode material; gas mixture sputtering; nonvolatile resistance memory switching behaviors; resistive random access memory device; sputter-deposited thin film; Electrodes; Films; Ions; Nonvolatile memory; Resistance; Switches; Tin; IGZO thin film; RRAM; nonvolatile memory; resistance switching;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2011 11th Annual
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-1428-3
DOI :
10.1109/NVMTS.2011.6137093
