Title :
Development of a hybrid CVD/SOD integration sequence for reliable, high performance interconnect systems
Author :
Waeterloos, J. ; Cummings, S. ; Ohmoto, Y. ; Arche, L. ; Stevens, R. ; Lucero, S. ; Yang, K. ; Im, J. ; Mills, M. ; Strittmatter, R. ; Beach, E. ; Rozeveld, S.
Author_Institution :
Adv. Electron. Mater., Dow Chem. Co., Midland, MI, USA
Abstract :
The use of hybrid integration schemes is investigated using a combination of a SiOC film at the via level and a porous SiLK Y film at the trench level. Sequential finite element analysis is used to determine the mechanics and, subsequently, a hybrid damascene interconnect is built to demonstrate the approach.
Keywords :
chemical vapour deposition; dielectric materials; dielectric thin films; finite element analysis; interconnected systems; metallisation; permittivity; polymer films; porous materials; silicon compounds; SiOC; SiOC film; hybrid integration; interconnect systems; mechanics; porous SiLK Y film; sequential finite element analysis; spin on deposition; Chemical analysis; Chemical vapor deposition; Conducting materials; Copper; Dielectric materials; Etching; Inorganic materials; Milling machines; Resins; Semiconductor materials;
Conference_Titel :
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN :
0-7803-8312-5
DOI :
10.1109/ASMC.2004.1309610
